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Tuesday, August 4, 2020 | History

3 edition of Microwave characteristics of interdigitated photoconductors on a HEMT structure found in the catalog.

Microwave characteristics of interdigitated photoconductors on a HEMT structure

Microwave characteristics of interdigitated photoconductors on a HEMT structure

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  • 26 Currently reading

Published by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, D.C.], [Springfield, VA .
Written in English

    Subjects:
  • Optical detectors.,
  • Gallium arsenide semiconductors.,
  • Aluminum gallium arsenides.,
  • Detectors.,
  • Electrical properties.,
  • Optical properties.,
  • Photoconductors.

  • Edition Notes

    StatementScott M. Hill and Paul C. Claspy.
    SeriesNASA contractor report -- 182197., NASA contractor report -- NASA CR-182197.
    ContributionsClaspy, Paul C., Lewis Research Center.
    The Physical Object
    FormatMicroform
    Paginationi, 86 p.
    Number of Pages86
    ID Numbers
    Open LibraryOL15407179M

    Listed below are some important characteristics and properties of electromagnetic waves. Electromagnetic waves are transverse in nature as they propagate by varying the electric and magnetic fields such that the two fields are perpendicular to each other. This book assesses the potential of microwave technology for industrial applications, reviews the latest equipment and processing methods, and identifies both the gaps in understanding of microwave processing technology and the promising development opportunities that take advantage of this new technology's unique performance characteristics.

    We have also investigated the effect of the meander antenna structures to the characteristics of the photomixers. For both tip-to-tip nano-gap and interdigitated electrodes, the active region can be regarded as a capacitor-like THz current source. It can be modeled by a discrete current source in CST Microwave Studio to excite the meander antenna. The junction field effect transistor or JFET is widely used in electronics circuits. The junction field effect transistor is a reliable and useful electronic component that can be used very easily in a variety of electronic circuits ranging from JFET amplifiers to JFET switch circuits.

      The current voltage characteristics of the device structures are then measured. The detectors exhibit a linear IV (current-voltage) behavior in the forward and the reverse bias case. The bias current for voltages as high as V is only 2 nA, which is close to the system detection limit of 1 nA. The development of microwave semiconductor devices, de­ scribed in this book, has proceeded from the simpler, two-terminal, devices such as GUNN or IMPATT devices, which originated in the s, to the sophisticated monolithic circuit MESFET three-terminal active elements, of the s and s.


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Microwave characteristics of interdigitated photoconductors on a HEMT structure Download PDF EPUB FB2

Microwave characteristics of interdigitated photoconductors on a HEMT structure Hill, Scott M.; Claspy, Paul C. Abstract. Interdigitated photoconductive detectors of various geometries were fabricated on AlGaAs/GaAs heterostructure material.

The processes used in the fabrication of these devices are described, and the results of a study of Author: Paul C. Claspy, Scott M. Hill. Microwave characteristics of interdigitated photoconductors on a HEMT structure.

[Scott M Hill; Paul C Claspy; Lewis Research Center.] Home. WorldCat Home About WorldCat Help. Search. Search for Library Items Search for Lists Search for Book\/a>, bgn:Microform\/a>, schema. MICROWAVE CHARACTERISTICS OF INTERDIGITATED PHOTOCONDUCTORS ON A HEMT STRUCTURE SUMMARY Interdigitated photoconductive detectors of various geometries have been fabricated on AlGaAs/GaAs heterostructure material.

This report describes the processes used in fabrication of these devices and presents the results of a study of their optical and. Microwave HEMT Photoconductive Detectors - Fibre optics can deliver both microwave and control signals to solid-state phased array elements.

This paper describes photoconductors able to detect 2 GHz signals that can be made integral to MMICs. Claspy S. Hill K. Bhasin. Abstract: Microwave transistors are useful as small-signal amplifiers to 6 GHz and power amplifiers to 4 GHz. Nearly all microwave transistors are of the silicon planar type.

Power transistors use three types of geometries--interdigitated, overlay, and mesh--while small-signal transistors use interdigitated only.

The main objective of this comprehensive text is to introduce the students the physics and the operational principles as well as the characteristics, and applications of the microwave semiconductor devices.

These devices are making a revolutionary change in the field of communication and radars. As a result of the accelerating rate of growth of microwave technology in research and.

Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlAs diode laser.

Results of these measurements are presented and compared with that of GaAs photoconductors. The aim of this article is to provide a clear‐cut understanding of the origin of the current‐gain peak (CGP) affecting the microwave behavior of high electron mobility transistors (HEMTs).

Pseudomorphic HEMT (PHEMT) devices have demonstrated superior performance at microwave and millimeter wave frequency ranges. They exhibit multi-functional characteristics such as high power, high efficiency and low noise over a broad frequency range (C-band through W-band). Because of their. Introduction.

Wide bandgap material-based devices are very appealing for high breakdown and high temperature applications because of their outstanding properties [, ].AlGaN/GaN/ALN high electron mobility transistors (HEMTs) are used in RF and high frequency applications because of the high saturation velocity and electron mobility of the 2-D electron gas (2-DEG) channel formed at the.

Characteristics of Microwave Radiation Microwaves are composed of bundles of energy that travel through a vacuum in a sine-wave form. Ultimately, EM radiation is classified by. Interdigitated photoconductors whose operation is based on the generation of carriers in a modulation doped AlxGa1-xAs/GaAs (x = ) heterostructure.

A process technology for a pseudomorphic high electron mobility transistor (P-HEMT) with an offset-gate structure has been developed for millimeter-wave monolithic microwave ICs (MMICs). A HEMT. Light is widely used to control a variety of microwave devices, including switches, antennas, and detectors.

Here, the authors present a photoconductive device integrated into a coplanar waveguide to tune complex impedances at microwave frequencies with applied light. The authors measured the current–voltage characteristics of the device as a function of the applied light intensity and fit.

An interdigitated electrode structure was chosen for the HEMT photoconductive detec- tors, as shown in Fig. The active area of the devices is 50 pm square and the length of the ohmic contact fingers is 45 pm. Two different geometries, with contact spacings of and 5 pm respectively, were fabricated.

The vertical structure of the HEMT. Electromagnetic radiation - Electromagnetic radiation - Microwaves: The microwave region extends from 1, toMHz (or 30 cm to 1 mm wavelength).

Although microwaves were first produced and studied in by Hertz, their practical application had to await the invention of suitable generators, such as the klystron and magnetron.

Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these. RF and Microwave Semiconductor Device Handbook book. this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging.

High Electron Mobility Transistors. With Prashant Chavarkar, Umesh K. Mishra. View abstract. Microwave assisted reactive sputtering was applied to obtain homogeneous and high optical quality ITO thin films with thickness of 50,and nm.

pulsed output characteristics, rf small-signal and breakdown performance of normally-off InAlN/GaN HEMTs with varied gate-to-drain distance dGD. The presented study of AIGaNIGaN HEMT. PHEMT devices and their incorporation into advanced monolithic integrated circuits is the enabling technology for modern microwave/millimeter wave system applications.

Although still in its infancy, PHEMT MIMIC technology is already finding applications in both military and commercial systems, including radar, communication and automotive.

Definition of Microwave. Microwave is a kind of electromagnetic wave. In a broad sense, the microwave frequency range is from MHz to GHz. But In microwave communication, the frequency range is generally from 3 GHz to 30 GHz. According to the characteristics of microwave propagation, microwave can be considered as plane wave.We have reached the double conclusion: that invention is choice, that this choice is imperatively governed by the sense of scientific beauty.

Hadamard (), Princeton University Press, by permission. The great majority of all sources and amplifiers of microwave energy, and all devices for receiving or detecting microwaves, use a semiconductor active element.This is especially true in microwave power amplifiers (PAs), for which many advances on design and active device technology have been made public.

In this respect, despite recognized device processing infancy, one of the most promising technologies is the one based on wide-bandgap materials, such as GaN high electron-mobility transistors (HEMTs).